Print Page | Contact Us | Report Abuse | Sign In | Register
Graphene Technology Journal
Share |

Graphene Technology

The Official Journal of The Graphene Council

Published by SPRINGER  

ISSN: 2365-6301 (print version)
ISSN: 2365-631X (electronic version)

Member Only Access  

About: Graphene Technology is the premiere source of breaking information on the commercial and practical applications of graphene and graphene related materials

  • The official journal of The Graphene Council
  • A forum for findings on commercial and practical applications of graphene
  • Covers studies on graphene markets and standardization aspects

Graphene Technology focuses on the commercial and practical applications of graphene in its different forms, such as graphene sheets, nanoplatelets, graphene nanotubes, dispersions and composites. 

Not a member?  Join Here. 

 

Editor-in-Chief:
Costas Galiotis, University of Patras, Greece

DeputyEditor:
Antonio H. Castro Neto, National University of Singapore, Singapore

News & Views Editor:
Dexter Johnson, The Graphene Council, Spain/USA 

 

Associate Editors:

Arindam Ghosh, Indian Institute of Science, India

Christian Punckt, KIT, Germany

Wencai Ren, Institute of Metal Research Chinese Academy of Science, China

 

Editorial Board:

Amaia Zurutuza, Graphenea, Spain

Aravind Vijayaraghavan, University of Manchester, UK

Balaji Sitharaman, Stony Brook University, USA

C.N.R. Rao, CSIR Center for Excellence in Chemistry, India

Christopher W. Bielawski, UNIST, South Korea

Daniel C. Elias, Federal University of Minas Gerais, Brazil

Davide Donadio, UC Davis, USA

Fei Wei, Tsinghua University, China

Fengnian Xia, Yale University, USA

Francesco Bonaccorso, Istituto Italiano di Tecnologia, Italy

Gianaurelio Cuniberti, TU Dresden, Germany

Hideyuki Kanematsu, National Institute of Technology Suzuka, Japan

Hua Zhang, Nanyang Technological University, Singapore

Hui-Ming Cheng, Shenyang National Laboratory, China

Jeffrey T Glass, Duke University, USA

Krzysztof Koziol, University of Cambridge, UK

Luigi Colombo, Texas Instruments Inc., USA

Matthieu Houllé, Nanocyl, Belgium

Mattia Bramini, Istituto Italiano di Tecnologia IIT, Italy

Michael Strano, MIT, USA

Shu-Jen Han, IBM T J Watson Research Center, USA

Stephan Roche, ICREA, Spain

Sung-Yool Choi, KAIST, South Korea

Tawfique Hasan, University of Cambridge, UK

Xuesong Li, University of Electronic Science and Technology of China, China

Young Hee Lee, SKKU, South Korea

Zhongfan Liu, Peking University, China